High-voltage pull-up device

Details High-voltage pull-up device High-voltage pull-up device

1988-07-14

1989-09-19

Sikes, William L.

357233, 357 234, 357 44, H01L 2980, H01L 2978

Patent

active

048686204

ABSTRACT:
An integrated circuit in which a large potential can be maintained between the source of the device and the substrate on which this device and other devices are fabricated is described. The circuit employs a minority carrier sink region to remove minority carriers from the gate region of a MOS depletion device. The sink region is shielded from the substrate by a buried layer which prevents punch-through between the sink region and the substrate.

REFERENCES:
patent: 4485392 (1984-11-01), Singer
patent: 4611220 (1986-09-01), MacIver
D. Hodges and H. Jackson, "Analysis and Design of Digital Integrated Circuits", McGraw-Hill, NY, 1983, pg. 38.

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