Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2007-01-23
2007-01-23
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C216S099000
Reexamination Certificate
active
10625166
ABSTRACT:
A wet etching method of removing silicon from a substrate includes depositing a layer comprising silicon in elemental form over a substrate. The layer is exposed to an aqueous liquid etching solution comprising a hydroxide and a fluoride, and having a pH of at least 10, under conditions and for a period of time effective to etch the elemental silicon from the substrate. Wet etching can be employed in methods of forming trench isolation, and in other methods. Other aspects and implementations are contemplated.
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Fucsko Janos
Waldo Grady S.
Smoot Stephen W.
Wells St. John P.S.
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