Semiconductor light emitting device using group I and group VII

Details Semiconductor light emitting device using group I and group VII Semiconductor light emitting device using group I and group VII

1987-09-16

1989-09-19

Mintel, William A.

357 16, 357 63, 357 61, H01L 3300

Patent

active

048686158

ABSTRACT:
A semiconductor light emitting device is disclosed which comprises a compound semiconductor substrate, an n type ZnS.sub.x Se.sub.1-x crystal layer (0.ltoreq.x.ltoreq.1) formed on the substrate and containing a Group VII element as a donor impurity, and a p type ZnS.sub.y Se.sub.1-y crystal layer (0.ltoreq.y.ltoreq.1) formed on the n type crystal layer and containing a Group I element as an acceptor impurity, where a pn junction is formed between the n type crystal layer and the p type crystal layer.

REFERENCES:
patent: 3578507 (1971-05-01), Chiang
patent: 3670220 (1972-06-01), Kun et al.
patent: 4695857 (1987-09-01), Baba et al.
patent: 4727557 (1988-02-01), Burnham et al.
Bleicher, "Group II-VI Compounds in Opto. Electronics", Funk-Technik, 31, 20/1976, pp. 644-652.
Park et al, "P-Type Conduction in Li-Dopeb Zn Se", Applied Physic Letters, vol. 18, No. 2, 1971, pp. 45-46.
Applied Physics Letters, vol. 18, No. 2, p. 45, 1971, Y. S. Park et al.

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