Semiconductor device utilizing multiquantum wells

Details Semiconductor device utilizing multiquantum wells Semiconductor device utilizing multiquantum wells

1988-03-07

1989-09-19

Edlow, Martin H.

357 16, 357 57, H01L 2712

Patent

active

048686123

ABSTRACT:
A semiconductor device comprises a first barrier layer, a quantum well layer formed on the first barrier layer and having a bottom of conduction band with an energy which varies with a curve of second order, a second barrier layer formed on said quantum well layer, and first and second contact layers. The first barrier layer, the quantum well layer and the second barrier layer make up a layer sequence which is repeated a predetermined number of times, and the first contact layer connects to the first barrier layer in a first of the predetermined number of layer sequences, while the second contact layer connects to the second barrier layer in a last of the predetermined number of layer sequences.

REFERENCES:
patent: 4257055 (1981-03-01), Hess
patent: 4503540 (1985-03-01), Nakashima
patent: 4745452 (1988-05-01), Sollner

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