Semiconductor device having bonding pad above low-k...

Details Semiconductor device having bonding pad above low-k... Semiconductor device having bonding pad above low-k...

2006-12-12

2006-12-12

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S784000, C257S758000, C438S629000, C438S617000, C438S622000

Reexamination Certificate

active

07148575

ABSTRACT:
A semiconductor device comprises a protective element on a substrate; a low-k dielectric film opposite the protective element and having mechanical strength smaller than a silicon oxide film; a mesh wiring opposite the protective element and in the low-k dielectric film, the mesh wiring including power supply wirings and ground wirings arranged in a mesh, the mesh wiring being electrically connected to the protective element; a silicon oxide film on the mesh wiring and the low-k dielectric film; and a bonding pad on the silicon oxide film and opposite the mesh wiring.

REFERENCES:
patent: 6143396 (2000-11-01), Saran et al.
patent: 6163075 (2000-12-01), Okushima
patent: 6560862 (2003-05-01), Chen et al.
patent: 6650010 (2003-11-01), Davis et al.
patent: 6670710 (2003-12-01), Matsunaga
patent: 6781238 (2004-08-01), Nonaka
patent: 2003/0201484 (2003-10-01), Ozawa
patent: 08/236706 (1996-09-01), None

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