Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2006-12-26
2006-12-26
Estrada, Michelle (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S533000, C257S071000, C257S351000, C257S358000, C257S363000, C257S379000, C257SE27016, C257SE27025, C257SE27033
Reexamination Certificate
active
07154158
ABSTRACT:
As for the resistor on the semiconductor substrate, it is required to achieve obtaining a metal resistor, which can be formed in the latter half of a preliminary process for manufacturing a semiconductor, in addition to forming a polysilicon resistor, which is formed in the first half of the preliminary process. A capacitor having MIM structure comprises a lower electrode, a capacitive insulating film and an upper electrode, all of which are sequentially formed in this sequence. A resistor structure having MIM structure also comprises a lower electrode, a capacitive insulating film and a resistor, all of which are sequentially formed in this sequence. In this case, the biasing conditions thereof should be selected so that the resistor structure lower electrode of the MIM structure resistor is not coupled to any electric potential, and is in a floating condition. Therefore, even if the signal of higher frequency is applied to the metal resistor, the resistor structure lower electrode is hardly affected by the parasitic capacitance thereof due to its floating condition, thereby providing improved high frequency characteristics of the device including such metal resistor.
REFERENCES:
patent: 2003/0017699 (2003-01-01), Zurcher et al.
patent: 2004/0087098 (2004-05-01), Ng et al.
patent: 1-223757 (1989-09-01), None
patent: 3-006858 (1991-01-01), None
patent: 5-013732 (1993-01-01), None
patent: 5-226340 (1993-09-01), None
patent: 9-139470 (1997-05-01), None
patent: 2001-267320 (2001-09-01), None
patent: 2002-033583 (2002-01-01), None
patent: 2003-152085 (2003-05-01), None
Kikuta Kuniko
Nakayama Makoto
Estrada Michelle
NEC Electronics Corporation
Tobergte Nicholas J.
Young & Thompson
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