Method to eliminate striations and surface roughness caused...

Details Method to eliminate striations and surface roughness caused... Method to eliminate striations and surface roughness caused...

2006-12-26

2006-12-26

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S639000, C438S714000, C216S058000

Reexamination Certificate

active

07153779

ABSTRACT:
A plasma etch process for forming a high aspect ratio contact opening through a silicon oxide layer is disclosed. The silicon oxide layer is plasma etched using etch gases that include at least one organic fluorocarbon gas. At least one etch gas is used that includes one or more nitrogen-comprising gases to deposit a surface polymeric material during the etching for maintaining a masking layer over the silicon oxide layer. The method of the invention achieves a complete and anistropic etching of a contact opening having a high aspect ratio and the desired dimensions.

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