Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-08-29
2006-08-29
Mai, Anh Duy (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51024, C313S506000, C428S690000, C428S917000
Reexamination Certificate
active
07098474
ABSTRACT:
A hole injecting electrode composed of ITO is formed on a glass substrate. On the hole injecting electrode, a hole injecting layer composed of CuPc (copper phthalocyanine), a plasma thin film of CFxformed by plasma CVD, a hole transporting layer of NPB, and a light emitting layer are formed in the order. On the light emitting layer, an electron transporting layer is formed, and an electron injecting electrode is formed thereon.
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Hamada Yuji
Kanno Hiroshi
Nishimura Kazuki
Yoneda Kiyoshi
Duy Mai Anh
McDermott Will & Emery LLP
Sanyo Electric Co,. Ltd.
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