Method for manufacturing a light emitting device

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal

Reexamination Certificate

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C438S459000, C438S928000, C438S977000

Reexamination Certificate

active

07118930

ABSTRACT:
A method for manufacturing a light emitting device includes (a) preparing a semiconductor element formed with a crystalline substrate, and a temporary element, the temporary element including a laser-transmissive substrate and a laser-dissociable layer formed on the laser-transmissive substrate, (b) attaching the laser-dissociable layer of the temporary element to the epitaxial layer of the semiconductor element through a adhesive layer, (c) thinning the crystalline substrate, (d) applying a laser beam to the temporary element so as to dissociate the laser-dissociable layer of the temporary element, and removing the temporary element from the adhesive layer, and (e) removing the adhesive layer from the epitaxial layer of the semiconductor element.

REFERENCES:
patent: 6245596 (2001-06-01), Kosaki et al.
patent: 6723165 (2004-04-01), Ogawa et al.
patent: 6861335 (2005-03-01), Ueda
patent: 6967981 (2005-11-01), Chua et al.
patent: 7015117 (2006-03-01), Urbanek
patent: 2004/0245543 (2004-12-01), Yoo

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