Pattern image comparison method, pattern image comparison...

Image analysis – Applications – Manufacturing or product inspection

Reexamination Certificate

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Details

C382S209000, C382S218000

Reexamination Certificate

active

07146035

ABSTRACT:
A pattern image comparison method is provided which comprises a first input step of inputting a first pattern image based on design data for a reticle mask or a semiconductor device; a second input step of inputting a second pattern image of the reticle mask or semiconductor device manufactured based on the design data; a calculation step of calculating at least one parameter of parameters including a part or all of area, outer periphery, barycenter, and diagonal line of the first pattern image and the second pattern image; and an output step of outputting a result of comparison of a pattern on the reticle mask or semiconductor device and a pattern of the design data based on the calculated parameters of the first and second pattern images.

REFERENCES:
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patent: 5900941 (1999-05-01), Matsuyama et al.
patent: 6522776 (2003-02-01), Ehrichs
patent: 6690469 (2004-02-01), Shibata et al.
patent: 6757875 (2004-06-01), Matsuoka
patent: 2001-281178 (2001-10-01), None

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