Power semiconductor rectifier having broad buffer structure...

Details Power semiconductor rectifier having broad buffer structure... Power semiconductor rectifier having broad buffer structure...

2006-08-15

2006-08-15

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

With specified impurity concentration gradient

With high resistivity

C257S655000, C257S657000

Reexamination Certificate

active

07091579

ABSTRACT:
Impurity concentration (Nd(X)) in an n-drift layer in a diode is at a maximum at a position at a distance Xp from an anode electrode in a direction from the anode electrode to a cathode electrode, and gradually decreases from the position toward each of the anode electrode and the cathode electrode. A ratio of the peak impurity concentration Npto an averaged impurity concentration Ndmin the n-drift layer is in the range of 1 to 5. This provides a diode and a manufacturing method thereof by which oscillations in voltage and current at reverse recovery are inhibited to achieve enhancement both in high speed and low-loss characteristics and in soft recovery characteristics.

REFERENCES:
patent: 6060745 (2000-05-01), Tadokoro et al.
patent: 6798001 (2004-09-01), Fujisawa et al.
patent: 401082563 (1987-09-01), None
patent: 11-26779 (1999-01-01), None
patent: 2000-223720 (2000-08-01), None
“An Advanced FWD Design Concept with Superior Soft Reverse Recovery Characteristics”; Nemoto et al.; ISPSD'2000 Copyright by the IEEE. Catalog No.: 00CH37094C; 4 pgs.
“Great Improvement in IGBT Turn-on Characteristics with Trench Oxide PiN Schottky (TOPS) Diode”; M. Nemoto et al.; Proceedings of 2001 Inter. Symposium on Power Semiconductor Devices & ICs, Osaka, Japan; pgs. 307-310.
“The Pinch Rectifier: A Low-Forward-Drop High Speed Power Diode”; B.J. Baliga; IEEE Electron Device Letters, vol. EDL-5, No. 6; Jun. 1984; pp. 194-196.
A Novel Soft and Fast Recovery Diode (SFD) with Thin P-Layer Formed by Al-Si Electrode; Mutsuhiro Mori et al.; CH2987-6/91/000-0113; IEEE 1991; pp. 113-117.
“Power Semiconductor Devices”; B.Baliga; PWS Publishing Company, Boston, MA; p. 73.

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