Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-08-01
2006-08-01
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S637000, C257S641000, C257S649000
Reexamination Certificate
active
07084508
ABSTRACT:
A lower portion of an interlayer insulating film is formed contiguous with a semiconductor wafer. The lower portion has a high impurity concentration and a high etching rate. An upper portion of an interlayer insulating film is formed over the lower portion apart from the semiconductor wafer. The upper portion has a low impurity concentration and a low etching rate. A plurality of contact holes are formed through the interlayer insulating film by anisotropic etching. The bottom portion of each contact hole is expanded by isotropic etching, and a contact is formed in the contact hole. Thus, a satisfactory contact is formed in a hole of a large aspect ratio.
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Nadav Ori
Renesas Technology Corp.
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