Self-pulsation type semiconductor laser

Details Self-pulsation type semiconductor laser Self-pulsation type semiconductor laser

2006-08-15

2006-08-15

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010

Reexamination Certificate

active

07092422

ABSTRACT:
In a self-pulsation type semiconductor laser, a first clad layer of a first conductivity type, an active layer, and a second clad layer of a second conductivity type having a striped ridge portion are successively stacked on a semiconductor substrate of the first conductivity type. In an embedding layer formed on either side surface of the ridge portion and on either flat portion other than the ridge portion of the second clad layer, a saturable absorption layer is provided on a material layer having a refractive index equal to or greater than that of the second clad layer and not absorbing laser light.

REFERENCES:
patent: 5949809 (1999-09-01), Ashida
patent: 6002701 (1999-12-01), Kan et al.
patent: 6865202 (2005-03-01), Matsumoto
patent: 2004/0159849 (2004-08-01), Yamaguchi et al.
patent: 06-069589 (1994-03-01), None
patent: 07-193316 (1995-07-01), None
patent: 08-316563 (1996-11-01), None
patent: 09-181389 (1997-07-01), None
patent: 2000357842 (2000-12-01), None
Chinese Office Action issued Jun. 10, 2005, for Chinese Patent Application No. 200310116121.4 filed Nov. 14, 2003, 7 pages.

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