Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections
Reexamination Certificate
2006-10-31
2006-10-31
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular signal path connections
C257S225000, C257S226000, C257S227000, C257S228000, C257S229000, C257S230000, C257S231000, C257S232000, C257S233000, C257S234000, C257S390000, C257S391000, C257S529000, C257S530000, C257S758000, C257S760000, C257S770000, C257S774000
Reexamination Certificate
active
07129531
ABSTRACT:
A programmable resistance memory element comprising an adhesion layer between the programmable resistance material and at least one of the electrodes. Preferably, the adhesion layer is a titanium rich titanium nitride composition.
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Fournier Jeffrey P.
Kostylev Sergey A.
Ovonyx Inc.
Schlazer Philip H.
Siskind Marvin S.
Soward Ida M.
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