Semiconductor device

Details Semiconductor device Semiconductor device

2006-10-10

2006-10-10

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S211000, C257S760000, C257SE21577, C257SE21578, C257SE21579

Reexamination Certificate

active

07119442

ABSTRACT:
A semiconductor device comprising a first insulating layer formed above a semiconductor substrate, and comprising a first insulating material, a second insulating material and a hole, a relative dielectric constant of the first insulating material being 3 or less, a Young's modulus of the first insulating material being 10 GPa or less, a linear expansivity of the first insulating material being greater than 30×10−6° C.−1, and a linear expansivity of the second insulating material being 30×10−6° C.−1or less, and a second insulating layer formed on the first insulating layer, the second insulating layer having a groove connected to the hole, wherein a linear expansivity α of the first insulating layer within 6 μm from the hole is 30×10−6° C.−1or less, whereα=∑i=1⁢vi⁢αi,viand αiare a volume ratio and a linear expansivity of an i-th insulating material.

REFERENCES:
patent: 6713873 (2004-03-01), O'Loughlin et al.
patent: 2003/0116854 (2003-06-01), Ito et al.
patent: 2005/0116348 (2005-06-01), Minamihaba et al.
patent: 11-054621 (1999-02-01), None
patent: 2003-197742 (2003-07-01), None
patent: 2003-289099 (2003-10-01), None

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