Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Metallic housing or support
Reexamination Certificate
2006-10-24
2006-10-24
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Metallic housing or support
C438S106000, C438S119000, C438S126000, C438S127000, C257SE23153
Reexamination Certificate
active
07125752
ABSTRACT:
In a method for making a microwave circuit, a first dielectric is deposited over a ground plane, and then a conductor is formed on the first dielectric. A second dielectric is then deposited over the conductor and first dielectric, thereby encapsulating the conductor between the first and second dielectrics. In one embodiment, a ground shield layer is formed over the first and second dielectrics by 1) precoating the first and second dielectrics with a metallo-organic layer, and then 2) depositing a thickfilm ground shield layer over the precoat layer. Alternately, a ground shield layer is formed over the first and second dielectrics by 1) placing a polymer screen over the first and second dielectrics, and applying pressure to the polymer screen until it at least partially conforms to a contour of the dielectrics, and then 2) printing a thickfilm ground shield layer through the polymer screen.
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Botka Julius
Casey John F.
Dove Lewis R.
Drehle James R.
Johnson Rosemary O.
Agilent Technologie,s Inc.
Fourson George R.
Pham Thanh V.
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