Phase controlled sublimation

Details Phase controlled sublimation Phase controlled sublimation

2006-12-12

2006-12-12

Gupta, Yogendra N. (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S088000, C117S089000, C117S091000, C117S099000, C117S951000

Reexamination Certificate

active

07147713

ABSTRACT:
A method of forming a silicon carbon compound. A silicon source is introduced into an environment. Silicon particles are formed therefrom. One or more hydrocarbons are introduced into the environment separately from the silicon source, thereby forming one or more silicon carbon compounds. A dissociation enhancer may be introduced into the environment to minimize silicon particle size prior to it joining the hydrocarbon source.

REFERENCES:
patent: 3617398 (1971-11-01), Bilous et al.
patent: 3920799 (1975-11-01), Wiebke et al.
patent: 3925577 (1975-12-01), Fatzer et al.
patent: 4634601 (1987-01-01), Hamakawa et al.
patent: 5248385 (1993-09-01), Powell
patent: 5254370 (1993-10-01), Nagasawa et al.
patent: 5288326 (1994-02-01), Maeda et al.
patent: 5612132 (1997-03-01), Goela et al.
patent: 5704985 (1998-01-01), Kordina et al.
patent: 5915194 (1999-06-01), Powell et al.
patent: 6039812 (2000-03-01), Ellison et al.
patent: 6063186 (2000-05-01), Irvine et al.
patent: 6297522 (2001-10-01), Kordina et al.
patent: 6620518 (2003-09-01), Lavery et al.
patent: 6665476 (2003-12-01), Braun et al.
patent: 2002/0197761 (2002-12-01), Patel et al.
patent: 44 32 813 (1996-03-01), None
patent: 0 554 047 (1993-08-01), None
patent: 0 835 336 (2000-09-01), None
patent: WO 00/43577 (2000-07-01), None
patent: WO 01/27361 (2001-04-01), None
Chen, et al., “Improvement of 3C-SiC Surface Morphology on Si(100) by Adding HCI using Atmospheric CVD,” Materials Science Forum vols. 338-342, pp. 257-260.
Gao, et al., “Low-temperature chemical-vapor deposition of 3C-SiC films on Si(1 0 0) using SiH4-C2H4-HC1-H2,” Journal of Crystal Growth 191 (1998) pp. 439-445.
Powell, et al., “SiC Materials—Progress, Status, and Potential Roadblocks,” Proceedings of the IEEE, vol. 90, No. 6, Jun. 2002, pp. 942-955.
Chaudhry, et al., “The Role of Carrier Gases in the Epitaxial Growth of β-SiC on Si by CVD,” Journal of Crystal Growth, 113 (1991) Aug. Nos. 1/2, Amsterdam, NL, pp. 121-126.
Kimoto, et al., “Recent Achievements and Future Challenges In SiC Homoepitaxial Growth,” Materials Science Forum, vols. 389-393 (2002) pp. 165-170.
Masuda, et al., “Surface Morphology of 4H-SiC Inclined towards <1100> and <1120> Grown by APCVD Using the Si2Cl6+C3H8System,” Materials Science Forum vols. 353-356 (2001) pp. 139-142.
Barrett, et al., “Growth of Large SiC Single Crystals,”Journal of Crystal Growth, vol. 128, pp. 358-362, (1993).
Ellison, et al., “Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments,”Materials Science Forum, vols. 338-342, pp. 131-136 (2000).
Ellison, et al., “HTCVD Growth of Semi-Insulating 4H-SiC Crystals with Low Defect Density,”Mat. Res. Soc. Symp., vol. 640, pp. H1.2.1-H1.2.11, (2001).
Ellison, et al., “HTCVD Grown Semi-Insulating SiC Substrates,”Materials Science Forum, vols. 433-436, pp. 33-38, (2003).
Sundqvist, et al., “Growth of High Quality p-Type 4H-SiC Substrates by HTCVD,”Materials Sicence Forum, vols. 433-436, pp. 21-24 (2003).
Tairov, et al., “Investigation of Growth Processes of Ingots of Silicon Carbide Single Crystals,”Journal of Crystal Growth, vol. 43, pp. 209-212, (1978).
International Search Report for PCT/US04/13057, dated Jan. 31, 2006 with a mailing date of Mar. 10, 2006.

Affiliated with

Also associated with

Rating

Phase controlled sublimation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase controlled sublimation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase controlled sublimation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3711122