Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1989-04-03

1990-04-24

James, Andrew J.

357 234, 357 42, 357 54, 357 59, H01L 2978

Patent

active

049203916

ABSTRACT:
In a semiconductor memory device formed on a semiconductor substrate (11), a first FET (21) is formed on a substrate. A first polysilicon film (13) serves as a gate electrode of this first FET (21). A second polysilicon film (16) is formed over the first polysilicon film (13), being separated by an insulating film (15). A third polysilicon film (20) is formed on the top and sides of the second polysilicon film (16). The third polysilicon film (20) has an impurity-doped region (19). A lower end (20a) of the third polysilicon film (20) is in contact with the first polysilicon film (13). The first, second and third polysilicon films (13, 16, 20) form a second FET (22), with the second polysilicon film (16) forming a gate electrode, and that part of the third polysilicon film (20) which is between the impurity-doped region (19) and the contacting end (20a) and adjacent to the second polysilicon film (16 ) forming a channel.

REFERENCES:
patent: 4669062 (1987-05-01), Nakano
patent: 4771323 (1988-09-01), Sasaki
Sturm et al., "A Three-Dimensional Folded Dynamic RAM in Beam-Recrystalized Polysilicon", May 1984, IEEE Electron Device Letters vol. 5, pp. 151-153.
Nikkei Electronics, 10/7/85 m oo, 255-274; "Application of Polysilicon, Transistors to 3 Dimensional LSI Memories"; Malhi, et al.
Extended Abstracts of the 16th (1984) International Conference on Solid State Devices and Materials, Kobe, 1984, pp. 265-268; Shichijo, et al.

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