Thin film head

Dynamic magnetic information storage or retrieval – Head – Hall effect

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G11B 5127

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active

060468912

ABSTRACT:
The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films, a nonmagnetic film sandwiched between the magnetic films, and leads connected to the magnetoresistance effect element wherein the width of one of the magnetic films, which essentially responds to a signal magnetic field, is not more than a distance between leads. The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films and a nonmagnetic film sandwiched between the magnetic films, which makes use of a change in magnetic resistance caused by spin-dependent scattering, wherein at least a portion of one magnetic films, which essentially respond to a signal magnetic field, extends in a direction same as that of the signal magnetic field.

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Physical Review Letters, vol. 44, No. 23 Jun. 10, 1991 W.P. Pratt, Jr., et al. Perpendicular Giant Magnetoresistance of Ag/Co Multilayers; pp. 3060-3063.
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