Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2006-08-08
2006-08-08
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S631000, C438S645000, C438S738000, C438S754000
Reexamination Certificate
active
07087534
ABSTRACT:
Methods for removing titanium-containing layers from a substrate surface where those titanium-containing layers are formed by chemical vapor deposition (CVD) techniques. Titanium-containing layers, such as titanium or titanium nitride, formed by CVD are removed from a substrate surface using a sulfuric acid (H2SO4) solution. The H2SO4solution permits selective and uniform removal of the titanium-containing layers without detrimentally removing surrounding materials, such as silicon oxides and tungsten. Where the titanium-containing layers are applied to the sidewalls of a hole in the substrate surface and a plug material such as tungsten is used to fill the hole, subsequent spiking of the H2SO4solution with hydrogen peroxide (H2O2) may be used to recess the titanium-containing layers and the plug material below the substrate surface.
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Micro)n Technology, Inc.
Picardat Kevin M.
Schwegman Lundberg Woessner & Kluth P.A.
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