Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-03-04
1986-11-11
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29580, 148DIG50, 357 49, 427 93, H01L 2131, H01L 21302, H01L 2176
Patent
active
046214143
ABSTRACT:
The invention comprises an improved isolation slot in an integrated circuit structure which minimizes damage to the silicon substrate. The improved isolation slot is formed by etching a slot in the substrate of an integrated circuit structure; depositing a buffer layer in the slot adjacent the walls of the slot; and forming an isolation oxide layer in the slot over the buffer layer; whereby the presence of the buffer layer between the substrate and the isolation oxide minimizes damage to the substrate by the oxide. In a preferred embodiment, the buffer layer comprises polysilicon which is partially oxidized to form the isolation oxide layer. A barrier layer is formed between the slot walls and the polysilicon buffer layer to electrically insulate the polysilicon from the adjoining integrated circuit structure.
REFERENCES:
patent: 4353086 (1982-10-01), Jaccodine et al.
patent: 4542396 (1985-09-01), Schutten et al.
patent: 4554728 (1985-11-01), Shepard
Tsang, "Buried-Gate Electrically Alterable Memory Device", I.B.M. Tech. Discl. Bulletin 24, (3), 8/81.
Advanced Micro Devices , Inc.
Callahan John T.
Hearn Brian E.
King Patrick T.
Taylor John P.
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