Measuring and testing – Speed – velocity – or acceleration – Angular rate using gyroscopic or coriolis effect
Reexamination Certificate
2006-08-29
2006-08-29
Williams, Hezron (Department: 2856)
Measuring and testing
Speed, velocity, or acceleration
Angular rate using gyroscopic or coriolis effect
C073S504140, C073S514320, C257S414000
Reexamination Certificate
active
07096732
ABSTRACT:
A semiconductor device includes gaps formed in a semiconductor substrate to provide an inner portion movable in x and y directions. Drive electrodes vibrate the inner portion in the x direction, and detection electrodes detect movement in the y direction generated when an angular velocity is applied thereto. Monitor electrodes generate monitor signals for monitoring movement of the inner portion in the x direction. Shield wires are provided between the drive and detection electrodes and the monitor electrodes to suppress capacitive coupling. Dummy electrodes adjacent to the output electrodes and capacitively coupled to the drive electrodes generate a dummy signal. Dummy signal wires are respectively connected to the dummy electrodes and to the circuit substrate. The dummy signal includes an induced component of a periodical signal and is supplied to the circuit substrate to cancel another induced component of the periodical signal in the drive and monitor signals.
REFERENCES:
patent: 5728936 (1998-03-01), Lutz
patent: 5892153 (1999-04-01), Weinberg et al.
patent: 5955668 (1999-09-01), Hsu et al.
patent: 5969225 (1999-10-01), Kobayashi
patent: 5992233 (1999-11-01), Clark
patent: 6070464 (2000-06-01), Koury et al.
patent: 6119518 (2000-09-01), Itou et al.
patent: 6240780 (2001-06-01), Negoro et al.
patent: 6327907 (2001-12-01), Park
patent: 6445195 (2002-09-01), Ward
patent: 6536282 (2003-03-01), Kipp et al.
patent: 2001/0032508 (2001-10-01), Lemkin et al.
patent: 2002/0020219 (2002-02-01), DeRoo et al.
patent: A-10-47971 (1998-02-01), None
Higuchi Hirofumi
Katsumata Takashi
Denso Corporation
Hanley John C
Posz Law Group , PLC
LandOfFree
Semiconductor device with shielding does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device with shielding, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with shielding will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3708150