Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2006-10-31

2006-10-31

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

C257S098000, C257SE29092, C372S075000, C372S043010, C372S050100

Reexamination Certificate

active

07129512

ABSTRACT:
The present invention provides a semiconductor laser device including a heat sink having one main surface, an n-AlGaAs cladding layer disposed on the main surface of the heat sink, an AlGaAs active layer disposed on the n-AlGaAs cladding layer and a p-AlGaAs cladding layer disposed on the AlGaAs active layer. An effective refractive index and a thermal resistance between a main surface on the heat sink side, of the AlGaAs active layer and a main surface on the heat sink side, of the n-AlGaAs cladding layer are respectively set smaller than those between a main surface on the side opposite to the heat sink, of the AlGaAs active layer and a main surface on the side opposite to the heat sink, of the p-AlGaAs cladding layer.

REFERENCES:
patent: 5568499 (1996-10-01), Lear
patent: 7-38193 (1995-02-01), None
patent: 7-170017 (1995-07-01), None
patent: 11-233883 (1999-08-01), None
M. A. Afromowitz, “Thermal conductivity of Ga1-xAlxAs alloys”, J. Appl. Phys. vol. 44, No. 3, Mar. 1973, pp. 1292-1294.
H. C. Casey Jr., et al. “Refractive Index of AlxGa1-xAs between 1.2 and 1.8 eV”, Appl. Phys. Lett., vol. 24, No. 2, pp. 63-65, 1974.
W. B. Joyce, et al., “Thermal resistance of heterostructure lasers”, J. Appl. Phys., vol. 46, No. 2, pp. 855-862, 1975.
H. Tanaka, et al., “Refractive indices of In0.49Ga0.51-xAlxP lattice matched to GaAs”, J. Appl. Phys., vol. 59, No. 3, pp. 985-986, 1986.
H. Fujii, et al. “Effect pf thermal resistivity on the catastrophic optical damage power density og AlGalnP laser diodes”, Appl. Phys. Lett, vol. 62, No. 17, pp. 2114-2115, 1993.

Affiliated with

Also associated with

Rating

Semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3707792