Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-02-14
2006-02-14
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S435000, C438S437000, C438S770000, C438S773000
Reexamination Certificate
active
06998326
ABSTRACT:
The method for manufacturing a shallow trench isolation (STI) in a semiconductor device with an enhanced gap-fill property and without a detrimental effect of fluorine by introducing a two-stage thermal process. The method includes steps of: preparing a semiconductor substrate obtained by a predetermined process on which a pad oxide and a pad nitride are formed on predetermined locations thereof; forming a trench structure in the semiconductor substrate; forming a hydrogen (H2)-based high density plasma (HDP) oxide layer over a first resultant structure; forming a nitrogen trifluoride (NF3)-based HDP oxide layer into the trench structure with a predetermined depth; carrying out a two-stage thermal process for removing fluorine in the NF3-based HDP oxide layer; and forming a helium (He)-based HDP oxide layer over a second resultant structure.
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Hynix / Semiconductor Inc.
Mayer Brown Rowe & Maw LLP
Thompson Craig A.
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