Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-10-10
2006-10-10
Wille, Douglas A. (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S016000, C438S035000, C257S013000, C257S022000, C257S084000, C257S094000, C257S103000, C257S184000, C257S432000
Reexamination Certificate
active
07118932
ABSTRACT:
A method of manufacturing a waveguide type optical element wherein Zn is selectively diffused on a light absorption layer using an undoped InP layer. Since an impurity diffusion area is made on the light absorption layer under a ridge part, a depletion layer becomes thin in a thickness direction and an electric field can strongly be applied. Thereby, an extinction ratio characteristic of a device can be improved.
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Oki Electric Industry Co. Ltd.
Volentine Francos & Whitt PLLC
Wille Douglas A.
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