Method of manufacturing waveguide type optical element and...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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Details

C438S016000, C438S035000, C257S013000, C257S022000, C257S084000, C257S094000, C257S103000, C257S184000, C257S432000

Reexamination Certificate

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07118932

ABSTRACT:
A method of manufacturing a waveguide type optical element wherein Zn is selectively diffused on a light absorption layer using an undoped InP layer. Since an impurity diffusion area is made on the light absorption layer under a ridge part, a depletion layer becomes thin in a thickness direction and an electric field can strongly be applied. Thereby, an extinction ratio characteristic of a device can be improved.

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patent: 5990496 (1999-11-01), Kunisato et al.
patent: 6242761 (2001-06-01), Fujimoto et al.
patent: 6541297 (2003-04-01), Takahashi
patent: 6590918 (2003-07-01), Mannou et al.
patent: 09199788 (1997-07-01), None
patent: 2000286507 (2000-10-01), None

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