Flash memory

Details Flash memory Flash memory

2006-06-27

2006-06-27

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185330, C365S185180, C365S185240, C365S185270, C365S218000

Reexamination Certificate

active

07068543

ABSTRACT:
Flash memory supporting methods for erasing memory cells using a decrease in magnitude of a source voltage of a first polarity to increase the magnitude of a control gate voltage of a second polarity during an erase period.

REFERENCES:
patent: 4384349 (1983-05-01), McElroy
patent: 4503524 (1985-03-01), McElroy
patent: 5265059 (1993-11-01), Wells et al.
patent: 5357463 (1994-10-01), Kinney
patent: 5477499 (1995-12-01), Van Buskirk et al.
patent: 5485423 (1996-01-01), Tang et al.
patent: 5643812 (1997-07-01), Park
patent: 5650964 (1997-07-01), Chen et al.
patent: 5726933 (1998-03-01), Lee et al.
patent: 5808937 (1998-09-01), Chi et al.
patent: 5828605 (1998-10-01), Peng et al.
patent: 5835409 (1998-11-01), Lambertson
patent: 5862078 (1999-01-01), Yeh et al.
patent: 5917755 (1999-06-01), Rinerson et al.
patent: 5949717 (1999-09-01), Ho et al.
patent: 5956268 (1999-09-01), Lee
patent: 5991195 (1999-11-01), Nobukata
patent: 6049484 (2000-04-01), Lee et al.
patent: 6049486 (2000-04-01), Lee et al.
patent: 6055183 (2000-04-01), Ho et al.
patent: 6055184 (2000-04-01), Acharya et al.
patent: 6122201 (2000-09-01), Lee et al.
patent: 6160740 (2000-12-01), Cleveland
patent: 6236608 (2001-05-01), Ratnam
patent: 6243298 (2001-06-01), Lee et al.
patent: 6243299 (2001-06-01), Rinerson et al.
patent: 6285588 (2001-09-01), Fastow
patent: 6409484 (2002-06-01), Hyun
patent: 6456533 (2002-09-01), Hamilton et al.
patent: 6515909 (2003-02-01), Wooldridge
patent: 6563741 (2003-05-01), Mihnea et al.
patent: 6614693 (2003-09-01), Lee et al.
patent: 6894931 (2005-05-01), Yaegashi et al.
patent: 6903407 (2005-06-01), Kang
patent: 2003/0235080 (2003-12-01), Yaegashi et al.
patent: 2004/0196685 (2004-10-01), Miida
Lee et al., “Using Erase Self-Detrapped Effect to Eliminate the Flash Cell Program/Erase Cycling VthWindow Close,” IEEE, 1999.

Affiliated with

Also associated with

Rating

Flash memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Flash memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3705680