Semiconductor memory device and method of fabricating the same

Details Semiconductor memory device and method of fabricating the same Semiconductor memory device and method of fabricating the same

1988-07-07

1990-04-24

James, Andrew J.

357 55, 357 49, H01L 2978

Patent

active

049203908

ABSTRACT:
A semiconductor memory device (DRAM) includes a plurality of island regions, at least one cell transistor disposed on each island region and a cylindrical capacitor surrounding each island region. With such a structure, the capacity of the cell capacitor incorporated into a small space can be increased. Furthermore, a method of fabricating a semiconductor memory device includes a step of forming a groove having a necessary depth in a semiconductor substrate, a step of depositing a membrane having excellent covering characteristics in the groove, a step of etching by using an etching method having a strong anisotropy in the vertical direction while leaving the deposited membrane on a sidewall, and a step of etching the exposed portion of the semiconductor surface deeper in the groove and forming a capacity element and isolation region by using this deep trench.

REFERENCES:
patent: 4353086 (1982-10-01), Jaccodine
patent: 4672410 (1987-06-01), Miura
patent: 4717942 (1988-01-01), Nakamura
patent: 4786954 (1988-11-01), Morie et al.
International Electron Device Meeting, Dec. 1984, pp. 240-243, by Nakajima, #9.4.
International Electron Devices Meeting, Dec. 1984, pp. 244-247, by Wada, #9.5.
International Electron Device Meeting, Dec. 1984, pp. 236-239, by Nakamura.

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