Method of forming isolation film of semiconductor device

Details Method of forming isolation film of semiconductor device Method of forming isolation film of semiconductor device

2006-06-13

2006-06-13

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S408000, C438S409000, C438S750000

Reexamination Certificate

active

07060630

ABSTRACT:
Disclosed is a method of forming the isolation film in the semiconductor device. The method comprises the steps of sequentially forming a pad oxide film and a pad nitride film on a silicon substrate, forming a photoresist pattern through which an isolation region is opened, on the pad nitride film, etching the pad nitride film and the pad oxide film using the photoresist pattern as an etch mask, thus exposing the silicon substrate of the isolation region, implementing an electrochemical etch process to form porous silicon in the silicon substrate of the exposed isolation region, removing the photoresist pattern, and implementing a thermal oxidization process to oxidize porous silicon, thereby forming an oxide film in the isolation region.

REFERENCES:
patent: 5501787 (1996-03-01), Bassous et al.
patent: 5903040 (1999-05-01), Hong
patent: 6528433 (2003-03-01), Gartner et al.
patent: 6673693 (2004-01-01), Kirchhoff
patent: 11-87489 (1999-03-01), None
patent: 100189736 (1999-01-01), None
Office Action from Korean Intellectual Property Office dated Oct. 19, 2004.
Office Action from Chinese Patent Office dated Jul., 2005 and accompanying letter from Chinese Associate regarding the same.

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