Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-06-20
2006-06-20
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S099000, C438S023000
Reexamination Certificate
active
07064353
ABSTRACT:
A relatively small ESD protection diode is formed on the same chip as a light emitting diode. In one embodiment, the ESD diode is a mesa-type diode isolated from the light emitting diode by a trench. To reduce the series resistance of the ESD diode, the PN junction and metal contact to the semiconductor material is made long and expands virtually the width of the chip. Various configurations of the PN junction and the N and P metal contacts for the ESD diode are described for increasing the breakdown voltage and for improved testing.
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S.J. Chang et al., “Improved ESD Protection by Combining InGan-GaN MQW LEDs With GaN Schottky Diodes,” IEEE Electron Device Letters, vol. 24, No. 3, Mar. 2003, pp. 129-131.
Ogonowsky Brian D.
Patent Law Group LLP
Philips Lumileds Lighting Company LLC
Prenty Mark V.
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