Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-02-28
2006-02-28
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S040000, C257S053000
Reexamination Certificate
active
07005312
ABSTRACT:
The method for manufacturing a CMOS image sensor is employed to pattern uniformly an overlying layer on a gate structure regardless of a gate width. The method includes steps of: preparing a semiconductor substrate by a predetermined process where a pixel area, a peripheral area and an input/output (I/O) area are defined by FOX therebetween; forming a first, a second and a third gate structures in the pixel, the peripheral and the I/O areas, respectively; forming a salicide barrier layer and a BARC layer over the resultant structure in sequence; forming a first photoresist mask on the BARC layer in the I/O area; carrying out a first etchback process by using the first photoresist mask as an etch mask; forming a second photoresist mask on the BARC layer in the pixel area; carrying out a second etchback process by using the second photoresist mask as the etch mask; and carrying out a third etchback process so as to expose top faces of the first and the second gate structures.
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Coleman W. David
Hynix / Semiconductor Inc.
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