Data processing: structural design – modeling – simulation – and em – Modeling by mathematical expression
Reexamination Certificate
2006-12-12
2006-12-12
Frejd, Russell (Department: 2128)
Data processing: structural design, modeling, simulation, and em
Modeling by mathematical expression
C703S013000
Reexamination Certificate
active
07149667
ABSTRACT:
A method and program for calculating ion distribution that reduce an error which will occur in the case of calculating ion distribution created by performing ion implantation on a crystalline member more than one time. An ion distribution specification step specifies existing ion distribution which has been created by performing ion implantation n (n is a natural number) times. An ion distribution assumption step assumes ion distribution which will be created by the (n+1)th ion implantation. A differential calculation step calculates the differential between the ion distribution, which will be created by the (n+1)th ion implantation and which is assumed by the ion distribution assumption step, and the existing ion distribution specified by the ion distribution specification step. An ion distribution calculation step calculates ion distribution created by the (n+1)th ion implantation by calculating the dose of ions implanted by the (n+1)th ion implantation from the differential calculated by the differential calculation step.
REFERENCES:
patent: 5859784 (1999-01-01), Sawahata
patent: 2002/0087297 (2002-07-01), Kanemura
Ottaviani et al., L. Aluminum Multiple Implantations in 6H-SiC at 300 K, Solid-State Electronics, vol. 43, No. 12, Dec. 1999, pp. 2215-2223.
Giles et al., M.D. Calculation of Channeling Effects During Ion Implantation Using the Boltzman Transport Equation, IEEE Transactions on Electron Devices, vol. ED-32, No. 10, Oct. 1985, pp. 1918-1924.
Bobmayr et al., W. Trajectory Split Method for Monte Carlo Simulation of Ion Implantation, IEEE Transactions on Semiconductor Manufacturing, vol. 8, No. 4, Nov. 1995, p. 402-7.
Hane et al., M. Ion Implantation Model Considering Crystal Structure Effects, IEEE Transactions on Electron Devices, vol. 27, No. 9, Sep. 1990, pp. 1959-1963.
Gibbons, J.F. Ion Implantation in Semiconductors—Part I Range Distribution Theory and Experiments, proceedings of the IEEE, vol. 56, No. 3, Mar. 1968, pp. 295-319.
Van Schie et al., E. Two Methods to Improve the Performance of Monte Carlo Simulations of Ion Implantation in Amorphous Targets, IEEE Transactions on Computer-Aided Design, vol. 8, No. 2, Feb. 1989, pp. 108-113.
Watt et al., J.T. Dispersion of MOS Capacitance-Voltage Characteristics Resulting from the Random Channel Dopant Ion Distribution, IEEE Transactions on Electron Devices, vol. 41, No. 11, Nov. 1994, pp. 2222-2232.
Frejd Russell
Fujitsu Limited
Staas & Halsey , LLP
LandOfFree
Method and program for calculating ion distribution does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and program for calculating ion distribution, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and program for calculating ion distribution will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3703110