Cold cathode field emission device and process for the...

Semiconductor device manufacturing: process – Electron emitter manufacture

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S257000

Reexamination Certificate

active

07118927

ABSTRACT:
A process for producing a cold cathode field emission device. A cathode electrode is formed on a front surface of a support member that transmits exposure light. An insulating layer is formed on an entire surface. A gate electrode is formed on the insulating layer. The support member is irradiated with exposure light from a back surface side of the support member through the hole as a mask for exposure. An electron-emitting-portion-forming-layer composed of a photosensitive material is formed at least inside the opening portion. The support member is irradiated with exposure light from a back surface side of the support member through the hole as a mask for exposure.

REFERENCES:
patent: 6297587 (2001-10-01), Kikuchi et al.
patent: 6465941 (2002-10-01), Kubota et al.
patent: 6580223 (2003-06-01), Konishi et al.
patent: 6771236 (2004-08-01), Konishi et al.
patent: 6900066 (2005-05-01), Toyota et al.
patent: 03-246851 (1991-11-01), None
patent: 07-320629 (1995-12-01), None
patent: 07-320636 (1995-12-01), None
patent: 2000-215792 (2000-08-01), None
patent: 2000-285796 (2000-10-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Cold cathode field emission device and process for the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cold cathode field emission device and process for the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cold cathode field emission device and process for the... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3701147

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.