Semiconductor device and semiconductor device producing system

Details Semiconductor device and semiconductor device producing system Semiconductor device and semiconductor device producing system

2006-10-03

2006-10-03

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S072000, C257S061000, C257S064000, C257S075000, C257S060000, C257S070000, C257S071000

Reexamination Certificate

active

07115903

ABSTRACT:
An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. More specifically, stripe or rectangular depressions and projections are provided in the semiconductor film. Then, continuous-wave laser light is irradiated along the stripe depressions and projections formed in the semiconductor film or in a direction of a major axis or minor axis of the rectangle.

REFERENCES:
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4448632 (1984-05-01), Akasaka
patent: 4710604 (1987-12-01), Shirasu et al.
patent: 5097297 (1992-03-01), Nakazawa
patent: 5145808 (1992-09-01), Sameshima et al.
patent: 5163220 (1992-11-01), Zeto et al.
patent: 5578897 (1996-11-01), Nomura et al.
patent: 5589406 (1996-12-01), Kato et al.
patent: 5594296 (1997-01-01), Mitsutake et al.
patent: 5636042 (1997-06-01), Nakamura et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5659329 (1997-08-01), Yamanobe et al.
patent: 5759879 (1998-06-01), Iwasaki
patent: 5776803 (1998-07-01), Young
patent: 5847780 (1998-12-01), Kim et al.
patent: 5851862 (1998-12-01), Ohtani et al.
patent: 5854803 (1998-12-01), Yamazaki et al.
patent: 5858823 (1999-01-01), Yamazaki et al.
patent: 5932893 (1999-08-01), Miyanaga et al.
patent: 5953597 (1999-09-01), Kusumoto et al.
patent: 5965915 (1999-10-01), Yamazaki et al.
patent: 5970368 (1999-10-01), Sasaki et al.
patent: 5981974 (1999-11-01), Makita
patent: 5986306 (1999-11-01), Nakajima et al.
patent: 5994174 (1999-11-01), Carey et al.
patent: 6133583 (2000-10-01), Ohtani et al.
patent: 6162667 (2000-12-01), Funai et al.
patent: 6184559 (2001-02-01), Hayakawa et al.
patent: 6210996 (2001-04-01), Yamazaki et al.
patent: 6283813 (2001-09-01), Kaneko et al.
patent: 6288414 (2001-09-01), Ahn
patent: 6291320 (2001-09-01), Yamazaki et al.
patent: 6307214 (2001-10-01), Ohtani et al.
patent: 6337259 (2002-01-01), Ueda et al.
patent: 6355940 (2002-01-01), Koga et al.
patent: 6365933 (2002-04-01), Yamazaki et al.
patent: 6372562 (2002-04-01), Matsumoto
patent: 6387779 (2002-05-01), Yi et al.
patent: 6388386 (2002-05-01), Kunii et al.
patent: 6410368 (2002-06-01), Kawasaki et al.
patent: 6424331 (2002-07-01), Ozawa
patent: 6429100 (2002-08-01), Yoneda
patent: 6455360 (2002-09-01), Miyasaka
patent: 6472684 (2002-10-01), Yamazaki et al.
patent: 6475840 (2002-11-01), Miyanaga et al.
patent: 6482721 (2002-11-01), Lee
patent: 6528397 (2003-03-01), Taketomi et al.
patent: 6555875 (2003-04-01), Kawasaki et al.
patent: 6566179 (2003-05-01), Murley et al.
patent: 6583440 (2003-06-01), Yasukawa
patent: 6602744 (2003-08-01), Ino et al.
patent: 6602758 (2003-08-01), Kizilyalli et al.
patent: 6632696 (2003-10-01), Kimura et al.
patent: 6653212 (2003-11-01), Yamanaka et al.
patent: 6667188 (2003-12-01), Tanabe
patent: 6674136 (2004-01-01), Ohtani
patent: 6700133 (2004-03-01), Ohtani et al.
patent: 6727122 (2004-04-01), Seo et al.
patent: 6759628 (2004-07-01), Ino et al.
patent: 6780687 (2004-08-01), Nakajima et al.
patent: 6812491 (2004-11-01), Kato et al.
patent: 6841434 (2005-01-01), Miyairi et al.
patent: 6841797 (2005-01-01), Isobe et al.
patent: 6847050 (2005-01-01), Yamazaki et al.
patent: 6861614 (2005-03-01), Tanabe et al.
patent: 6862008 (2005-03-01), Yamazaki et al.
patent: 6875998 (2005-04-01), Kato et al.
patent: 6884668 (2005-04-01), Yamazaki et al.
patent: 6906343 (2005-06-01), Yamazaki
patent: 6933527 (2005-08-01), Isobe et al.
patent: 2001/0000243 (2001-04-01), Sugano et al.
patent: 2001/0000627 (2001-05-01), Hayakawa et al.
patent: 2001/0015441 (2001-08-01), Kawasaki et al.
patent: 2001/0035526 (2001-11-01), Yamazaki et al.
patent: 2002/0004292 (2002-01-01), Yamazaki et al.
patent: 2002/0008801 (2002-01-01), Fukada et al.
patent: 2002/0048864 (2002-04-01), Yamazaki et al.
patent: 2002/0075208 (2002-06-01), Bae et al.
patent: 2002/0096680 (2002-07-01), Sugano et al.
patent: 2002/0098628 (2002-07-01), Hamada et al.
patent: 2002/0119609 (2002-08-01), Hatano et al.
patent: 2002/0121665 (2002-09-01), Kawasaki et al.
patent: 2002/0134981 (2002-09-01), Nakamura et al.
patent: 2003/0001800 (2003-01-01), Nakajima et al.
patent: 2003/0080436 (2003-05-01), Ishikawa
patent: 2003/0128200 (2003-07-01), Yumoto
patent: 2003/0141505 (2003-07-01), Isobe et al.
patent: 2003/0141521 (2003-07-01), Isobe et al.
patent: 2003/0181043 (2003-09-01), Tanada et al.
patent: 2003/0183854 (2003-10-01), Kato et al.
patent: 2003/0183875 (2003-10-01), Isobe et al.
patent: 2003/0186490 (2003-10-01), Kato et al.
patent: 2003/0209710 (2003-11-01), Yamazaki et al.
patent: 2003/0218169 (2003-11-01), Isobe et al.
patent: 2003/0218170 (2003-11-01), Yamazaki et al.
patent: 2003/0218171 (2003-11-01), Isobe et al.
patent: 2003/0218177 (2003-11-01), Yamazaki
patent: 2003/0219935 (2003-11-01), Miyairi et al.
patent: 2003/0230749 (2003-12-01), Isobe et al.
patent: 2003/0230750 (2003-12-01), Koyama et al.
patent: 2004/0016958 (2004-01-01), Kato et al.
patent: 2004/0016967 (2004-01-01), Yamazaki et al.
patent: 2004/0026696 (2004-02-01), Yamazaki et al.
patent: 2004/0063258 (2004-04-01), Kasahara et al.
patent: 2005/0020096 (2005-01-01), Miyairi et al.
patent: 2005/0029518 (2005-02-01), Kato et al.
patent: 2005/0029519 (2005-02-01), Yamazaki et al.
patent: 2005/0098784 (2005-05-01), Isobe et al.
patent: 2005/0161742 (2005-07-01), Isobe et al.
patent: 1 049 144 (2000-11-01), None
patent: 1 067 593 (2001-01-01), None
patent: 62-104117 (1987-05-01), None
patent: 63-031108 (1988-02-01), None
patent: 06-349735 (1994-12-01), None
patent: 07-130652 (1995-05-01), None
patent: 08-070129 (1996-03-01), None
patent: 08-078329 (1996-03-01), None
patent: 08-195357 (1996-07-01), None
patent: 10-012891 (1998-01-01), None
patent: 10-135468 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
patent: 11-084418 (1999-03-01), None
patent: 11-354442 (1999-12-01), None
patent: 2000-68520 (2000-03-01), None
patent: 2000-349296 (2000-12-01), None
patent: 2001-011085 (2001-01-01), None
patent: 2001-144027 (2001-05-01), None
patent: 2001-196599 (2001-07-01), None
patent: 2002-014337 (2002-01-01), None
patent: 2002-313811 (2002-10-01), None
patent: 2002-324808 (2002-11-01), None
patent: WO 00-63956 (2000-10-01), None
European Search Report dated May 20, 2005 for EP Application No. 02028650.6.
European Search Report dated Mar. 8, 2005 for EP Application No. 02028650.6.
M.W. Geis et al.,Crystallographic Orientation of Silicon on an Amorphous Substrate Using an Artificial Surface-Relief Grating and Laser Crystallization, Appl. Phys. Lett. 35(1), Jul. 1, 1979, pp. 71-74.
M.A. Baldo et al.,Very High-Efficiency Green Organic Light-Emitting Devices Based on Electroophosphorescence, Applied Physics Letters, vol. 75, No. 1, Jul. 5, 1999, pp. 4-6.
T. Tsutsui et al.,High Quantum Efficiency in Organic Light-Emitting Devices With Iridium-Complex as a Triplet Emissive Center, Japanese Journal of Applied Physics, vol. 38, Part 2, No. 12B, Dec. 15, 1999, pp.L1502-L1504.
M.A. Baldo et al.,Highly Efficient Phosphorescent Emission From Organic Electroluminescent Devices, Nature, vol. 395, Sep. 10, 1998, pp. 151-154.
T. Tsutsui et al.,Electroluminescence in Organic Thin Films, Photochemical Processes in Organized Molecular Systems, Sep. 22, 1990, pp. 437-449.
M. Kishino et al.,Physics of VLSI Device, Maruzen Co., Ltd., 1995, pp. 144-146.
Hara et al., “Ultra-High Performance Poly-Si TFTs on a Glass by a Stable Scanning CW Laser Lateral Crystallization,” AM-LCD '01, pp. 227-230.
Geis et al., “Crystalline Silicon on Insulators by Graphoepitaxy,” IEEE 1979, pp. 210-212.
Geis et al., “Grapho-epitaxy of Silicon on Fused Silica Using Surface Micropatterns and Laser Crytallization,” J. Vac. Sci. Tech., 16(6), Nov./Dec. 1979, pp. 1640-1643.
Lam et al., “Characteristics of MOSFETS Fabricated in Laser-Recrystallized Polysilicon Islands with a Retaining Wall Structure on an Insulating Substrate,” IEEE Electron Device Letters, vol. E

Affiliated with

Also associated with

Rating

Semiconductor device and semiconductor device producing system does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and semiconductor device producing system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and semiconductor device producing system will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3700503