Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-12-12
2006-12-12
Norton, Nadine (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C430S014000, C430S270100, C430S314000, C430S315000
Reexamination Certificate
active
07148152
ABSTRACT:
A laminated resist pattern with a T-shaped cross section is formed on a film to be patterned. The laminated resist pattern is composed of a bottom resist pattern and a top resist pattern. The surface area of the top resist pattern is larger than the surface area of the bottom resist pattern, and increased after the film is patterned via the laminated resist pattern.
REFERENCES:
patent: 3148983 (1964-09-01), Endermann et al.
patent: 5352564 (1994-10-01), Takeda et al.
patent: 5422221 (1995-06-01), Okazaki et al.
patent: 5721078 (1998-02-01), Kamijima
patent: 5725997 (1998-03-01), Kamijima
patent: 5747198 (1998-05-01), Kamijima
patent: 6242151 (2001-06-01), Furihata et al.
patent: 6579657 (2003-06-01), Ishibashi et al.
patent: 6916597 (2005-07-01), Kamijima et al.
patent: 2002/0187408 (2002-12-01), Thackeray et al.
patent: 2003/0143490 (2003-07-01), Kozawa et al.
patent: 37-18015 (1959-08-01), None
patent: 04320347 (1992-11-01), None
patent: A 6-242602 (1994-09-01), None
patent: A 6-273934 (1994-09-01), None
patent: A 9-96909 (1997-04-01), None
patent: A 2000-63466 (2000-02-01), None
patent: 2001228616 (2001-08-01), None
Abstract of Study for the design of high resolution novolak-DNQ photoresists: the effects of low-molecular-weight phenolic compounds on resist systems; Miyamoto et al.; Jul. 1995; SPIE vol. 2438, p. 223-234, Advances in Resist Technology and Processing XI.
Abstract of Study for the design of high resolution novolak-DNQ photoresists: the effects of low-molecular-weight phenolic compounds on resist systems; Miyamoto et al.; Jul. 1995; SPIE vol. 2438, p. 223-234, Advances in Resist Technology and Processing XI.
George Patricia A.
Norton Nadine
Oliff & Berridg,e PLC
TDK Corporation
LandOfFree
Method for fabricating a mask, method for fabricating a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating a mask, method for fabricating a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a mask, method for fabricating a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3699014