Method of fabricating flash memory device

Details Method of fabricating flash memory device Method of fabricating flash memory device

2006-10-17

2006-10-17

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S430000, C438S427000

Reexamination Certificate

active

07122443

ABSTRACT:
A method of fabricating a flash memory device is disclosed where a trench formation process and a wall oxide film formation process are performed separately depending on a pattern density, and wall oxide films are formed with different thicknesses. Accordingly, an increase in a thickness of the wall oxide films due to a smiling effect of tunnel oxide films by a wall oxidization process is prevented and reliability of a device can thus be improved.

REFERENCES:
patent: 6258692 (2001-07-01), Chu et al.
patent: 6794269 (2004-09-01), Gopalan et al.
patent: 6805614 (2004-10-01), Kwok

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