Semiconductor device and semiconductor device data write...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

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C257SE29323, C360S324200, C365S157000, C365S171000

Reexamination Certificate

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07148550

ABSTRACT:
A semiconductor device includes a memory portion in which a plurality of magneto-resistance effect elements each having a hard-axis of magnetization and an easy-axis of magnetization are arranged and one of binary data is written in all the magneto-resistance effect elements, and a circuit portion to which a write current is supplied to write only the other one of the binary data in only a selected magneto-resistance effect element selected from the magneto-resistance effect elements.

REFERENCES:
patent: 5835314 (1998-11-01), Moodera et al.
patent: 6225933 (2001-05-01), Salter et al.
patent: 6587370 (2003-07-01), Hirai
patent: 6785158 (2004-08-01), Nagashima
patent: 6795335 (2004-09-01), Hidaka
patent: 6903963 (2005-06-01), Hidaka
patent: 2002-231904 (2002-08-01), None

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