Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-12-12
2006-12-12
Tran, Mai-Huong (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S706000, C257S712000, C257S713000
Reexamination Certificate
active
07148573
ABSTRACT:
A semiconductor integrated circuit comprises a semiconductor substrate, a heat-producing circuit element formed in a multi-layer structure on the semiconductor substrate and performing a predetermined operation while producing heat of a relatively high temperature, a plurality of temperature-dependent circuit elements, each formed in a multi-layer structure in a predetermined location on the semiconductor substrate, performing a predetermined operation depending on temperature of the heat-producing circuit element, and each having a constant relationship in temperature-related properties with each another, and a heat conductive layer having a heat conductivity higher than a heat conductivity of the semiconductor substrate, and covering at least a heat-producing portion of the heat-producing circuit element and the plurality of temperature-dependent circuit elements continuously so as to conduct the heat produced by the heat-producing circuit element to the plurality of temperature-dependent circuit elements. With this structure, the semiconductor integrated circuit can maintain its intended operating accuracy regardless of changes in temperature.
REFERENCES:
patent: 6201300 (2001-03-01), Tseng et al.
patent: 07-321286 (1995-12-01), None
Okubo Takuya
Sakai Masaru
Arent & Fox PLLC
Tran Mai-Huong
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