Semiconductor laser array

Details Semiconductor laser array Semiconductor laser array

1997-08-04

2000-03-07

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 46, 372 38, 438 28, H01S 319, H01S 300, H01L 2120

Patent

active

060349824

ABSTRACT:
A semiconductor laser array has an array of a plurality of laser active sections mounted on a submount, with a common p-side electrode sandwiched therebetween. The laser active sections formed on a semiconductor substrate and separated from each other by separation channels are bonded onto the common p-side electrode in a junction-down fashion wherein the top layer of the laser active sections are bonded to the common p-side electrode. The semiconductor substrate are polished at the back surface for separation of the laser active sections from each other, followed by forming an n-side electrode for each of the laser active sections. The semiconductor laser array can be formed in a uniform thickness and can be driven by N-P-N transistor at a high speed.

REFERENCES:
patent: 3794883 (1974-02-01), Bylander et al.
patent: 4079404 (1978-03-01), Comerford et al.
patent: 4916710 (1990-04-01), Hattori
Ying Jay Yang et al. "Submilliampere continuous-wave room-temperature lasing operation of a GaAs mushroom structure surface-emitting laser" Applied Physics Letters, vol. 56, No. 19, May 7, 1990, New York, pp. 1839-1840, XP000149893.

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