Power transistor with integrated gate resistor

Details Power transistor with integrated gate resistor Power transistor with integrated gate resistor

1988-09-19

1990-04-24

James, Andrew J.

357 238, 357 2314, 357 41, 357 49, 357 50, 357 51, 357 59, H01L 2978, H01L 2702, H01L 2904

Patent

active

049203886

ABSTRACT:
A power MOS transistor includes a polycrystalline silicon layer which provides connection to act as a resistor between a first portion of gate metallization disposed above the gate of the device, and a second portion of gate metalization adjacent to the active source/gate region of the device.

REFERENCES:
patent: 3999210 (1976-12-01), Yamada
patent: 4157563 (1979-06-01), Bosselaar
patent: 4181913 (1980-01-01), Thornburg
patent: 4333225 (1982-06-01), Yeh
patent: 4352997 (1982-10-01), Raymond Jr. et al.
patent: 4451328 (1984-05-01), Dubois
patent: 4467519 (1984-08-01), Glang et al.
patent: 4471374 (1984-09-01), Hardee et al.
patent: 4490734 (1984-12-01), Yamada
patent: 4589004 (1986-05-01), Yasuda et al.
patent: 4602170 (1986-07-01), Berhn
patent: 4760434 (1988-07-01), Tsuzhki et al.
"A High Power MOS-FET With a Vertical Drain Electrode and Meshed Gate Structure", I. Yoshida et al., Japanese Journal of Applied Physics Supp., vol. 15, No. 7, 1976, pp. 179-183.

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