Electronic component for amplifying high frequency power and...

Telecommunications – Transmitter – Power control – power supply – or bias voltage supply

Reexamination Certificate

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C455S115100, C330S285000

Reexamination Certificate

active

07139538

ABSTRACT:
A high-frequency power module as a component of a radio communication system capable of performing communications in two frequency bands such as GSM and DCS and has a first transistor for output detection for receiving a signal which is the same as an input signal of a first power amplification transistor for amplifying a high frequency signal on the GSM side and a first current mirror circuit for passing current proportional to current of the transistor. A second transistor for output detection for receiving an input signal of a second power amplification transistor for amplifying a high frequency signal on the DCS side is also provided as is a second current mirror circuit for passing current proportional to current of the transistor. Conversion of current transferred from the first and second current mirror circuits to voltage is shared by the GSM and DCS.

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“Basic and Application of Microwaves”, Jul. 10, 1997, Sogo Electronics Press, pp. 191-193.
“Electronic Materials”, Apr. 1999, Kogyo Chosakai Publishing Co., Ltd, pp. 91-95.

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