Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate
2006-10-03
2006-10-03
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
C117S089000, C117S104000, C117S094000, C117S095000, C117S096000
Reexamination Certificate
active
07115166
ABSTRACT:
A method of forming (and apparatus for forming) a layer, such as a strontium titanate, barium titanate, or barium-strontium titanate layer, on a substrate by employing a vapor deposition method, particularly a multi-cycle atomic layer deposition process.
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Uhlenbrock Stefan
Vaartstra Brian A.
Kunemund Robert
Mueting, Raasch and Gebhardt, P.A.
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