Method and device for reducing the contact resistance in...

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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Reexamination Certificate

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07067840

ABSTRACT:
A method for selectively doping an organic semiconductor1material in the region of a contact area .1formed between a contact and the organic semiconductor material disposed thereon includes introducing the dopant with the aid of nanoparticles, the nanoparticles being disposed in a manner adjoining the contact area and, as a result, only a very narrow region of the organic semiconductor material being doped. The field increase effected by the nanoparticles results in a further reduction of the contact resistance.

REFERENCES:
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patent: 5705826 (1998-01-01), Aratani et al.
patent: 6646302 (2003-11-01), Kan et al.
patent: 99/48337 (1999-09-01), None
Johannes Schmitt et al.: “Metal Nanoparticle/polymer Superlattice Films:□□Fabrication and Control of Layer Structure”, Adv. Mater., vol. 9, 1997, No. 1, □□pp. 61-65.
Venkat Narayanan et al.: “Reduction of Metal-semiconductor Contact□□Resistance by Embedded Nanocrystals”, 2000 International Electron Device□□Meeting Technical Digest, 2000 IEEE.
Hagen Klauk et al.: A reduced complexity process for organic thin film□□transistorsl, Applied Physics Letters, vol. 76, No. 13, Mar. 27, 2000, pp.□□1692-1694.

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