Non-volatile memory cell having dual avalanche injection element

Details Non-volatile memory cell having dual avalanche injection element Non-volatile memory cell having dual avalanche injection element

1999-06-15

2000-03-07

Tran, Andrew Q.

Static information storage and retrieval

Floating gate

Particular connection

36518531, 3651851, 36518518, 36518527, 365187, 365188, 257318, 257319, 257320, 257322, G11C 1604

Patent

active

060348933

ABSTRACT:
A non-volatile memory cell includes a well region formed in a semiconductor substrate. First and second avalanche injection elements reside in the well region. A bifurcated floating-gate electrode includes a first segment overlying the first avalanche injection element and a second segment overlying the second avalanche injection element. A first contact region resides in the well region adjacent to the first segment of the floating-gate electrode, and a second contact region resides in the well region adjacent to the second segment of the floating-gate electrode. Upon the application of programming or erasing voltage, electrical charge is independently transferred to each of the first and second segments of the floating-gate electrode from the first and second avalanche injection elements, respectively.

REFERENCES:
patent: 5646901 (1997-07-01), Sharpe-Geisler et al.
patent: 5666309 (1997-09-01), Peng et al.
patent: 5748525 (1998-05-01), Wong et al.
U.S. Application No. 09/334,051 filed Jun. 15, 1999 by Mehta et al., entitled "Zero-Power CMOS Nonvolatile Memory Cell Having an Avalanche Injection Element", now allowed.

Affiliated with

Also associated with

Rating

Non-volatile memory cell having dual avalanche injection element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory cell having dual avalanche injection element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory cell having dual avalanche injection element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-369146