Nonvolatile memory cell and method for programming and/or verify

Static information storage and retrieval – Floating gate – Particular connection

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Details

36518528, 36518501, G11C 1604

Patent

active

060348925

ABSTRACT:
Nonvolatile memory device and a method of programming the same, is disclosed, wherein, for single level or multi-level programming of a cell, predetermined voltages are applied to a control gate, source and drain respectively for varying a charge amount in the floating gate. A channel in a transistor is turned off at an initial stage and then turned on thereafter, and at least one of the voltages applied to the control gate and the program/select gate is halted to stop the programming when a conductivity of the channel region reaches a reference value.

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