Static information storage and retrieval – Floating gate – Particular connection
Patent
1997-07-22
2000-03-07
Nguyen, Viet Q.
Static information storage and retrieval
Floating gate
Particular connection
36518528, 36518501, G11C 1604
Patent
active
060348925
ABSTRACT:
Nonvolatile memory device and a method of programming the same, is disclosed, wherein, for single level or multi-level programming of a cell, predetermined voltages are applied to a control gate, source and drain respectively for varying a charge amount in the floating gate. A channel in a transistor is turned off at an initial stage and then turned on thereafter, and at least one of the voltages applied to the control gate and the program/select gate is halted to stop the programming when a conductivity of the channel region reaches a reference value.
REFERENCES:
patent: 4931847 (1990-06-01), Corda
patent: 5040147 (1991-08-01), Yoshizawa et al.
patent: 5043940 (1991-08-01), Harari
patent: 5084745 (1992-01-01), Iizuka
patent: 5303187 (1994-04-01), Yu
patent: 5338952 (1994-08-01), Yamauchi
patent: 5422842 (1995-06-01), Cernea
patent: 5557566 (1996-09-01), Ochii
patent: 5583811 (1996-12-01), Van Houldt et al.
patent: 5614747 (1997-03-01), Ahn et al.
patent: 5668757 (1997-09-01), Teng
patent: 5757700 (1998-05-01), Kobayashi
patent: 5789777 (1998-08-01), Kojima
LG Semicon Co. Ltd.
Nguyen Viet Q.
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