Methods of forming semiconductor constructions

Semiconductor device manufacturing: process – Chemical etching

Reexamination Certificate

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C438S006000, C438S132000, C438S601000

Reexamination Certificate

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07115512

ABSTRACT:
The invention includes methods by which a fuse box of a semiconductor construction is fabricated to have a substantially uniform layer over fuses extending therein. In particular aspects, the invention includes methods in which one or more processing steps associated with fabrication and patterning of bond pads and redistribution layers is conducted simultaneously over a fuse box region to form and/or remove materials that are directly over the fuse box region.

REFERENCES:
patent: 5821160 (1998-10-01), Rodriguez et al.
patent: 6180503 (2001-01-01), Tzeng et al.
patent: 2001/0030169 (2001-10-01), Kitagawa et al.
patent: 2004/0140501 (2004-07-01), Kim
patent: 2004/0245598 (2004-12-01), Yamaguchi

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