Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-02-14
2006-02-14
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S096000
Reexamination Certificate
active
06998642
ABSTRACT:
A semiconductor structure with two light emitting diodes in series connection is disclosed. The semiconductor structure comprises two light emitting diodes (LEDs) having the same stack layers and abutting each other but spaced by an isolation trench. The stack layers from a bottom thereof include a thermal conductive substrate, an nonconductive protective layer, a metal adhering layer, a mirror protective layer, a p-type ohmic contact epi-layer, a upper cladding layer, an active layer, and a lower cladding layer. Two p-type ohmic contact metal electrodes for two LEDs are formed on an interface between the mirror protective layer and the ohmic contact epi-layer and buried in the mirror protective layer. The stack layers have first trenches formed therein which exposes the upper cladding layer and electrical connecting channels to connect p-type electrodes. The isolation trench is formed by patterning the exposed upper cladding layer until further exposing the nonconductive protective layer. Two n-type electrodes are formed on the lower cladding layer of two LEDs. A dielectric layer is deposited to fill the isolation trench and covered a sidewall of the first trench so that it can electrically isolate layers of the stack layers of the second LED while a metal connection trace formed thereon to connect the p-type ohmic contact electrode of the first LED and n-type of ohmic electrode of second LED.
REFERENCES:
patent: 5945689 (1999-08-01), Koike et al.
patent: 6878563 (2005-04-01), Bader et al.
Lin Jin-Ywan
Tu Chung-Cheng
Cao Phat X.
Doan Theresa T.
Troxell Law Office PLLC
United Epitaxy Co., Ltd.
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