Method for producing a ferroelectric capacitor that includes...

Details Method for producing a ferroelectric capacitor that includes... Method for producing a ferroelectric capacitor that includes...

2006-02-21

2006-02-21

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S396000

Reexamination Certificate

active

07001781

ABSTRACT:
A method for fabricating a device and a device, such as a ferroelectric capacitor, having a substrate, a contact plug through the substrate, a first barrier layer on the substrate, a first electrode on the first barrier layer, a dielectric layer on the first electrode, and a second electrode on the dielectric layer, comprises etching the second electrode and the dielectric layer of the device using a first hardmask, to shape the second electrode and the dielectric layer. The first hardmask is then removed and one or more encapsulating layers are applied to the second electrode and the dielectric layer. A further hardmask is applied to the one or more encapsulating layers. The first electrode is then etched according to the second hardmask down to the first barrier layer and the second hardmask is then removed from the one or more encapsulating layers.

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