Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-12-19
2006-12-19
Wong, Don (Department: 2163)
Coherent light generators
Particular active media
Semiconductor
C372S043010, C372S044010
Reexamination Certificate
active
07151786
ABSTRACT:
Provided are a semiconductor laser diode having a current confining layer and a method of fabricating the same. The semiconductor laser diode includes a substrate, a first material layer deposited on the substrate, an active layer which is deposited on the first material layer and emits a laser beam, and a second material layer which is deposited on the active layer and includes a ridge portion protruding from the active layer and a current confining layer formed by injection of ions into peripheral portions of the ridge portion so as to confine a current injected into the active layer. Therefore, it is possible to fabricate an improved semiconductor laser diode having a low-resonance critical current value that can remove a loss in an optical profile and reduce the profile width of a current injected into the active layer while maintaining the width of the ridge portion.
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Notice to Submit Response issued by the Korean Patent Office on Oct. 30, 2004 in corresponding application.
Ha Kyoung-ho
Kwak Joon-seop
Sung Youn-joon
Buchanan & Ingersoll & Rooney PC
Samsung Electro-Mechanics Co. Ltd.
Vy Hung Tran
Wong Don
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