Semiconductor on insulator device architecture and method of...

Details Semiconductor on insulator device architecture and method of... Semiconductor on insulator device architecture and method of...

2006-12-12

2006-12-12

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S479000, C257SE21122

Reexamination Certificate

active

07148121

ABSTRACT:
An SOI architecture is provided that comprises an inner substrate10which has a buried conductor layer12formed on an outer surface thereof. A bonding layer14is used to provide a cohesive bond with a buried insulator layer18.The semiconductor device layer20is formed on the outer surface of buried insulator layer18.An inductive well22can be formed to provide a platform for the formation of inductive devices34within an inductive region26.

REFERENCES:
patent: 5536361 (1996-07-01), Kondo et al.
patent: 6255731 (2001-07-01), Ohmi et al.

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