Plasma reactor with reduced chamber wall deposition

Details Plasma reactor with reduced chamber wall deposition Plasma reactor with reduced chamber wall deposition

1983-11-07

1985-04-23

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 39, 427 94, 118723, B05D 306

Patent

active

045130213

ABSTRACT:
A plasma reactor wherein material deposition on the sidewall is substantially prevented. In a radial flow reactor, wherein the reagent gases are injected at periphery of an annular substrate holder and exhausted near the center of the holder, a second gas flow of diluent gases is provided, which also flows radially to be exhausted at the center of the substrate holder. Since the diluent gas flow begins outboard of the reagent gas flow, the gas flow across the reagent gas injection nozzles prevents reagent gases from flowing outward. Thus, the gas adjacent to the chamber wall is almost entirely composed of the inert diluent gas, and material deposition on reactor walls is prevented.

REFERENCES:
patent: 4181564 (1980-01-01), Fogarty et al.
patent: 4282267 (1981-08-01), Kuyel

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